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SUD50N03-06P
Vishay Siliconix
N-Channel 30-V (D-S) 175 _ C MOSFET
PRODUCT SUMMARY
V DS (V) r DS(on) ( W )
0.0065 at V GS = 10 V
30
0.0095 at V GS = 4.5 V
TO-252
I D (A) b
84 b
59b
FEATURES
D TrenchFET r Power MOSFET
D 175 _ C Junction Temperature
D Optimized for Low-Side Synchronous Rectifier
Operation
D 100 % R g Tested
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
*
D
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information:
SUD50N03-06P
SUD50N03-06P–E3 (Lead (Pb)–free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T A = 25 _ C UNLESS OTHERWISE NOTED)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Symbol
V DS
V GS
Limit
30
" 20
Unit
V
Continuous Drain Current a
T C = 25 _ C
T C = 100 _ C
I D
84 b
59 b
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a
Single Pulse Avalanche Current
I DM
I S
I AS
100
25
45
A
Avalanche Energy
L = 0 0.1 1 mH
E AS
101.25
mJ
T C = 25 _ C
88
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T A = 25 _ C
P D
T J , T stg
8.3 a
–55 to 175
W
_ C
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec
Symbol
Typical
15
Maximum
18
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
Steady State
R thJA
R thJC
40
1.4
50
1.7
_ C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Based on maximum allowable Junction Temperature, package limitation current is 50 A.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 71844
S-52636—Rev. D, 02-Jan-06
www.vishay.com
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